In the rapidly evolving landscape of low-power electronics, a groundbreaking study led by Faraz Hashmi from the Department of Electronics and Communication Engineering at Jamia Millia Islamia in New Delhi, India, has shed new light on the potential of Graphene Nano-ribbon Field-Effect Transistors (GNRFETs) in optimizing operational transconductance amplifiers (OTAs) for Internet-of-Things (IoT) systems and portable smart devices. Published in Materials Research Express, the research delves into the intricate world of nanoelectronics, focusing on the use of one-dimensional armchair graphene nanoribbons (AGNRs) to enhance the performance of triple cascode operational transconductance amplifiers (TCOTAs).
The study, which was conducted at the 32-nanometer technology node using HSPICE, compares three distinct GNR-based TCOTA configurations against conventional CMOS-based TCOTAs. The findings are nothing short of remarkable. The pure GNRFET-TCOTA variant, in particular, showcased a significant 33.8% increase in DC gain and a 21.4% improvement in common-mode rejection ratio (CMRR). Moreover, it demonstrated substantial growth rates of 5.85 and 8.47 times for slew rate and 3-dB bandwidth, respectively. “These enhancements are crucial for applications requiring high-speed, energy-efficient, and compact designs,” Hashmi explains. “The potential of GNRFETs to optimize OTAs could revolutionize analog circuit capabilities for IoT systems and portable electronics.”
However, the pure GNR-based TCOTA did show a 9.4% delay compared to Si-CMOS-based TCOTA, highlighting the need for further optimization. The research also provides valuable insights into critical design parameters such as dimer lines (N), the number of GNRs (n_Rib), and ribbon spacing (W_SP), emphasizing their impact on circuit performance.
The implications of this research are far-reaching, particularly for the energy sector. As the demand for low-power, high-performance devices continues to grow, the integration of GNRFETs into analog circuits could lead to more efficient and compact designs. This could translate into significant energy savings and improved performance for a wide range of applications, from smart grids to wearable technology.
Hashmi’s work underscores the potential of GNRFETs to optimize operational transconductance amplifiers, paving the way for future developments in nanoelectronics. As the field continues to evolve, the insights gained from this study could shape the design of future electronic applications, driving innovation and efficiency in the energy sector and beyond. The findings, published in Materials Research Express, contribute to the ongoing advancement of nanoelectronics, pushing the boundaries of what is possible in low-power electronics.
