In the relentless pursuit of advancing semiconductor technology, a groundbreaking study has emerged from the labs of Yonsei University, promising to revolutionize the way we deposit beryllium oxide (BeO) films. Led by Juyoung Chae, a researcher at the School of Integrated Technology and the BK21 Graduate Program in Intelligent Semiconductor Technology, this innovative approach could significantly impact the energy sector and beyond.
Traditionally, depositing BeO films using thermal atomic layer deposition (ThALD) at low temperatures has been a challenge. The resulting films often suffer from low density and high carbon impurities, leading to poor electrical properties. However, Chae and his team have developed a novel method called discrete feeding method (DFM) that addresses these issues head-on.
“The conventional ThALD process at low temperatures just doesn’t cut it for high-quality BeO films,” Chae explains. “But with our discrete feeding method, we’ve managed to deposit BeO films at 150°C with significantly improved electrical performance.”
The implications of this breakthrough are vast, particularly for the energy sector. BeO is known for its excellent thermal conductivity and electrical insulating properties, making it an ideal material for high-power electronics and energy-efficient devices. By improving the quality of BeO films, this new method could lead to more efficient power electronics, better thermal management in semiconductor devices, and ultimately, more sustainable energy solutions.
The study, published in the journal ‘Applied Surface Science Advances’ (translated to English as ‘Advances in Applied Surface Science’), demonstrates that the film density of BeO grown by discrete feeding thermal ALD (DF-ThALD) at 150°C is 2.95 g/cm3, a notable improvement over conventional methods. Moreover, the leakage current density was reduced to 3.7 × 10⁻⁶ A/cm2 at -1 MV/cm, a reduction of approximately five orders of magnitude. These advancements highlight the effectiveness of the DFM in enhancing the quality of BeO films in low-temperature ThALD processes.
But how might this research shape future developments? The potential is immense. As the demand for energy-efficient technologies continues to grow, so does the need for high-quality materials like BeO. This study opens the door to new possibilities in semiconductor manufacturing, paving the way for more advanced and efficient devices. It also encourages further exploration into the temperature-dependent behavior of films grown using the DFM in ALD, a area that has seen limited investigation until now.
As we stand on the brink of a new era in semiconductor technology, Chae’s work serves as a beacon of innovation. By pushing the boundaries of what’s possible with BeO films, he and his team are not only advancing the field of materials science but also contributing to a more sustainable and energy-efficient future. The energy sector, in particular, stands to benefit greatly from these advancements, as the quest for better, more efficient technologies continues.
