In a significant stride towards enhancing the resilience of semiconductor devices in radiation-intensive environments, researchers have uncovered crucial insights into the behavior of silicon and silicon-germanium alloys under gamma-photon irradiation. The study, led by Ia Kurashvili from the Ilia Vekua Sukhumi Institute of Physics and Technology in Tbilisi, Georgia, and published in the Archives of Metallurgy and Materials (Archiwum Odlewnictwa), sheds light on the electrophysical and mechanical properties of these materials, paving the way for advancements in the energy sector.
The research focused on phosphorus-doped monocrystalline n-Si and n-Si+0.5 at.% Ge alloys, both in their pristine state and after exposure to 60Co-gamma photons. Kurashvili and her team meticulously examined the microstructure, electrophysical properties, and amplitude-dependent behavior of internal friction and shear modulus in these materials. Their findings reveal that gamma-photon irradiation significantly alters the electrical resistivity, carrier concentration, and mobility in these alloys.
“Gamma-photon irradiation increases the electrical resistivity by 15-20%, reduces the concentration of current carriers by 8-10 times, and increases their mobility by 1.5-times in the test n-Si sample,” Kurashvili explained. These changes were less pronounced in the SiGe alloy, indicating a potential advantage in using this material for radiation-stable applications.
The study also observed a 15-20% increase in critical strain amplitude under torsional oscillation frequencies of 0.5-5.0 Hz and strain amplitudes of 10-5 to 5×10-3 at room temperature. Notably, the effect of radiation hardening was more evident in the n-Si+0.5 at.% Ge alloy. “The possible mechanisms of changes of physical-mechanical characteristics have been analyzed,” Kurashvili added, highlighting the comprehensive nature of their investigation.
The implications of this research are profound for the energy sector, particularly in the development of radiation-stable, high-efficiency semiconductor devices. As the demand for advanced materials capable of withstanding harsh radiation environments grows, the insights provided by Kurashvili’s team could be instrumental in designing more robust and efficient technologies.
The study’s findings not only contribute to the scientific understanding of radiation effects on semiconductor materials but also offer practical solutions for enhancing the performance and reliability of devices used in nuclear power plants, space exploration, and other high-radiation applications. By elucidating the regularities in the changes of electrical and physical-mechanical characteristics in Si-Ge alloys irradiated by gamma photons, this research opens new avenues for innovation in the energy sector.
As the world continues to seek sustainable and efficient energy solutions, the work of Kurashvili and her team underscores the importance of materials science in driving technological progress. Their findings serve as a testament to the potential of interdisciplinary research in addressing the challenges of the 21st century, offering a glimpse into a future where advanced materials play a pivotal role in shaping the energy landscape.