In the heart of China, researchers at Yunnan University have made a significant stride in the world of semiconductor materials, potentially paving the way for more efficient microelectronic chips crucial for the energy sector. Led by Yongkang Jiang from the School of Materials and Energy, the team has uncovered a mechanism that could enhance the performance of gallium antimonide (GaSb) crystals, a material with promising applications in high-speed electronics and optoelectronic devices.
The team’s findings, published in *Information & Functional Materials* (translated as *Information and Functional Materials*), shed light on the intricate dance of defects and dopants within GaSb crystals. At the core of their discovery is the “compensation effect,” a phenomenon that can suppress intrinsic and complex defects, thereby improving carrier transport behavior.
GaSb crystals, known for their potential in high-speed electronics, often fall short due to low mobility caused by intrinsic defects that contribute to p-type semiconductor characteristics. However, Jiang and his team found that tellurium (Te) doping can induce an electron transport mechanism, significantly enhancing mobility. “The donor doping develops an electron transport via the impurity compensation effect, significantly enhancing mobility,” Jiang explained.
The team’s first-principle calculations revealed that intrinsic defects have low formation energy, contributing to p-type semiconductors. However, the introduction of Te doping alters this landscape, promoting electron transport and high mobility. Moreover, they identified that polar optical phonon-limited Fröhlich scattering dominates the GaSb scattering process at low carrier concentration and high operating temperatures.
The implications of this research are substantial for the energy sector. High-mobility GaSb crystals could lead to the development of high-performance microelectronic chips, which are essential for various energy applications, from power electronics to renewable energy systems. “This research lays a solid foundation for exploiting high-mobility GaSb and high-performance GaSb-based microelectronic chips,” Jiang stated.
The team’s work not only advances our understanding of defect-regulating scattering mechanisms but also opens new avenues for designing and fabricating high-quality GaSb-based devices. As the world continues to demand more efficient and powerful electronic devices, the insights gained from this research could be instrumental in meeting these needs.
In the ever-evolving landscape of semiconductor technology, Jiang’s team has provided a compelling narrative of how understanding and manipulating defects can lead to significant advancements. Their work serves as a testament to the power of fundamental research in driving technological innovation, particularly in the energy sector.