Beijing Team Cracks Particle Contamination Code in Semiconductor Production

In the high-stakes world of semiconductor manufacturing, even the smallest particles can cause big problems. A recent study published in *Materials Research Express* (which translates to *Materials Research Express* in English) sheds new light on how to minimize particle contamination during the plasma-enhanced chemical vapor deposition (PECVD) process, a critical step in creating low dielectric constant (low-k) films. The research, led by Hui Li from the Integrated Circuit Science and Engineering at Beijing Institute of Technology and Piotech Inc., offers a practical solution that could significantly boost wafer yield and tool uptime in the semiconductor industry.

The study focuses on a often-overlooked aspect of particle contamination: the flow-field effects in the vacuum transmission module (VTM) during low-k film deposition. While much of the current research concentrates on intrinsic defects formed during thin-film growth, Li and his team turned their attention to the transfer process between chambers. “We wanted to understand how the pressure difference between the vacuum process module (VPM) and VTM could affect particle contamination,” Li explains. “It’s a critical factor that hasn’t received much attention until now.”

To investigate this, the team conducted numerical simulations of the flow fields in both the VPM and VTM under different transfer pressures, ranging from 0.2 to 2 Torr. They then validated their findings through cumulative experiments and fab production-scale tests. The results were clear: increasing the VTM transfer pressure led to a decrease in particle counts on the wafers processed with a low-k recipe.

The commercial implications of this research are substantial. By optimizing the inter-chamber pressure difference, semiconductor manufacturers can reduce particle contamination, which in turn improves wafer yield and tool uptime. As Li notes, “This finding eliminated the production particle issue, raising tool uptime by at least 1.5% and boosting wafer yield.” In an industry where even minor improvements can translate to significant cost savings and increased efficiency, this is a notable advancement.

The study also opens up new avenues for future research. As the semiconductor industry continues to push the boundaries of miniaturization and performance, understanding and controlling particle contamination will become even more crucial. This research could pave the way for further investigations into the flow-field effects in various semiconductor manufacturing processes.

For the energy sector, which relies heavily on advanced semiconductor devices for everything from power grids to renewable energy systems, these improvements can contribute to more reliable and efficient technologies. As the world moves towards a greener future, every advancement in semiconductor manufacturing brings us one step closer to achieving our energy goals.

In the competitive landscape of semiconductor manufacturing, innovations like this one are not just welcome—they’re essential. By addressing a critical issue in PECVD processing, Li and his team have provided a valuable tool for manufacturers striving to improve their yields and efficiency. As the industry continues to evolve, such research will be instrumental in shaping the future of semiconductor technology.

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